Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk
作者： D. Barettin , S. I. Troshkov , Emanuele Pelucchi , Agnieszka M. Gocalińska , M. M. Kulagina
DOI: 10.1063/1.4979029
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摘要: Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy photoluminescence (PL) techniques. In MD structures, the QDs have nano-pan-cake shape with height ∼2 nm, lateral size 20–50 nm, density ∼5 × 109 cm−2. Their emission observed at ∼940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We InP(As) QD excitons into whispering gallery modes having diameter ∼3.2 μm providing a free spectral range ∼27 nm quality factors up Q∼13 000. Threshold ∼50 W/cm2 spontaneous coupling coefficient ∼0.2 measured for this MD-QD system.
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