Electrical behaviour of fresh and stored porous silicon films
作者： M.L Ciurea , I Baltog , M Lazar , V Iancu , S Lazanu
DOI: 10.1016/S0040-6090(98)00429-5
关键词:
摘要: Abstract We have measured I–V and C–V characteristics, the temperature dependence of dark currents, thermally stimulated depolarisation currents on fresh stored samples photoluminescent porous silicon. By storage in ambient, low rectifying curves become strong rectifying, MIS-like. I–T characteristics for only one activation energy, 0.49–0.55 eV range. After storage, a slightly modified value, about 0.50–0.60 is observed at temperatures only. At 280 K, energy suddenly changes to 1.20–1.80 eV. Also, both number positions maxima change by storage. The annealing 50°C induces small reversible irreversible ones samples. A simplified quantum confinement model proposed explain main aspects electrical behaviour silicon films. surface and/or interface contributions are especially currents. induced attributed oxidation process internal
harvard.edu
elsevier.com
sci-hub.se 参考文章(19)
M. Ben-Chorin, F. Möller, F. Koch, Nonlinear electrical transport in porous silicon. Physical Review B. ,vol. 49, pp. 2981- 2984 ,(1994) , 10.1103/PHYSREVB.49.2981
V. Petrova‐Koch, T. Muschik, A. Kux, B. K. Meyer, F. Koch, V. Lehmann, Rapid‐thermal‐oxidized porous Si−The superior photoluminescent Si Applied Physics Letters. ,vol. 61, pp. 943- 945 ,(1992) , 10.1063/1.107736
Fereydoon Namavar, H. Paul Maruska, Nader M. Kalkhoran, Visible electroluminescence from porous silicon np heterojunction diodes Applied Physics Letters. ,vol. 60, pp. 2514- 2516 ,(1992) , 10.1063/1.106951
N Koshida, H Koyama, Photoluminescent and electroluminescent properties of porous silicon Nanotechnology. ,vol. 3, pp. 192- 195 ,(1992) , 10.1088/0957-4484/3/4/009
Nobuyoshi Koshida, Hideki Koyama, Yuko Yamamoto, George J. Collins, Visible electroluminescence from porous silicon diodes with an electropolymerized contact Applied Physics Letters. ,vol. 63, pp. 2655- 2657 ,(1993) , 10.1063/1.110411
D. B. Dimitrov, Current-voltage characteristics of porous-silicon layers Physical Review B. ,vol. 51, pp. 1562- 1566 ,(1995) , 10.1103/PHYSREVB.51.1562
L. T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers Applied Physics Letters. ,vol. 57, pp. 1046- 1048 ,(1990) , 10.1063/1.103561
P. Steiner, F. Kozlowski, W. Lang, Light‐emitting porous silicon diode with an increased electroluminescence quantum efficiency Applied Physics Letters. ,vol. 62, pp. 2700- 2702 ,(1993) , 10.1063/1.109236
M. Ben-Chorin, F. Möller, F. Koch, W. Schirmacher, M. Eberhard, Hopping transport on a fractal: ac conductivity of porous silicon Physical Review B. ,vol. 51, pp. 2199- 2213 ,(1995) , 10.1103/PHYSREVB.51.2199
C. Peng, K. D. Hirschman, P. M. Fauchet, Carrier transport in porous silicon light‐emitting devices Journal of Applied Physics. ,vol. 80, pp. 295- 300 ,(1996) , 10.1063/1.362783