Plasmon resonant excitation in grating-gated AlN barrier transistors at terahertz frequency
作者： Lin Wang , Weida Hu , Jun Wang , Xiaodong Wang , Shaowei Wang
DOI: 10.1063/1.3695154
关键词:
摘要: This paper describes the plasmon resonances in AlN/GaN high electron mobility transistors. It is shown that wide tunable with frequency located at terahertz band can be obtained this material system. The results originate from ultra-high density induced by polarization effect and higher order excitation. At room temperature, dielectric response caused phonon-polariton interactions obliterates than 10 THz. However, viscosity contribution to damping of plasmons very small these devices. Our also show potential device for applications.
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