Coverage of Copper Thin Films Deposited on the Sidewall of Through-silicon Vias Using Supercritical Fluids

摘要: Supercritical fluids are high-pressure media possessing both high diffusivity and solvent capability. Metal thin films can be deposited in supercritical from an organometallic compound (precursor) through thermochemical reactions. In this study, copper were silicon microholes of 10 μm diameter 350 depth to the fabricate through-silicon vias (TSVs) used three-dimensional integrated circuits. The fabrication temperatures pressures varied respectively within 180−280°C 1−20 MPa, respectively. maximum coating decreased with deposition temperature, although a peak was observed at around MPa. dependence temperature pressure on discussed using Thiele model, which describes balance between diffusive transport consumption precursor. model results experimental showed good agreement. Diffusion constants precursor estimated depths.