Relative efficiencies of different ions for producing freely migrating defects

摘要: In situ experimental measurements of radiation-induced segregation rates in a Ni--12.7 at. % Si alloy during irradiation at temperatures from 350 to 650 /sup 0/C with several different ions are reported. A simple analytical model is used extract the relative efficiency each ion for producing freely migrating defects, i.e., those defects which free induce microstructural changes. strong decrease observed increasing mass. Irradiations average recoil energies 1.8, 2.7, 51, and 74 keV only 48%, 37%, 8%, <2% as efficient, respectively, introducing migrate long distances an weighted energy 730 eV. The results compared defect production efficiencies obtained by other techniques.