Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
作者： S. S. Iyer , J. C. Tsang , M. W. Copel , P. R. Pukite , R. M. Tromp
DOI: 10.1063/1.101014
关键词:
摘要: The influence of growth temperature on the interfacial abruptness strained Ge layers, a few monolayers thick, embedded in Si has been studied using Raman spectroscopy to identify presence GeGe and GeSi bonds medium energy ion scattering characterize spatial extent layers. Atomically sharp interfaces are observed for temperatures just above crystalline amorphous transition range, with pseudomorphic found >∼250 °C. Asymmetric mixing into capping layer occurs during at higher temperatures. Significantly less intermixing annealing after growth, pointing role dynamical processes occurring front.
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R.M. Tromp, H.H. Kersten, E. Granneman, F.W. Saris, R. Koudijs, W.J. Kilsdonk, A new UHV system for channeling/blocking analysis of solid surfaces and interfaces Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 4, pp. 155- 166 ,(1984) , 10.1016/0168-583X(84)90055-7
P. D. Persans, A. F. Ruppert, B. Abeles, T. Tiedje, Raman scattering study of amorphous Si-Ge interfaces. Physical Review B. ,vol. 32, pp. 5558- 5560 ,(1985) , 10.1103/PHYSREVB.32.5558
M. Copel, R. M. Tromp, Structural perfection of the Si(111)-(1×1) As surface Physical Review B. ,vol. 37, pp. 2766- 2769 ,(1988) , 10.1103/PHYSREVB.37.2766
JC Tsang, WA Thompson, GS Oehrlein, Raman spectroscopy of surface layers on crystalline silicon Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 3, pp. 1129- 1135 ,(1985) , 10.1116/1.583067
Kinihiro Sakamoto, Tsunenori Sakamoto, Satoru Nagao, Gen Hashigutchi, Katsuya Kuniyoshi, Yoshio Bando, Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-x MBE Growth on Si(001) Substrates Japanese Journal of Applied Physics. ,vol. 26, pp. 666- 670 ,(1987) , 10.1143/JJAP.26.666
Akiko Kobayashi, S. Das Sarma, Epitaxial growth of GexSi Physical Review B. ,vol. 37, pp. 1039- 1042 ,(1988) , 10.1103/PHYSREVB.37.1039
J. C. Tsang, S. S. Iyer, S. L. Delage, Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy Applied Physics Letters. ,vol. 51, pp. 1732- 1734 ,(1987) , 10.1063/1.98558
T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar, J. P. Mannaerts, A. Ourmazd, Structurally induced optical transitions in Ge-Si superlattices Physical Review Letters. ,vol. 58, pp. 729- 732 ,(1987) , 10.1103/PHYSREVLETT.58.729
S. S. Iyer, R. A. Metzger, F. G. Allen, Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy Journal of Applied Physics. ,vol. 52, pp. 5608- 5613 ,(1981) , 10.1063/1.329494