Sic schottky diode

摘要: PROBLEM TO BE SOLVED: To provide an SiC Schottky diode which has reduced leakage current, a reverse voltage stop characteristic is improved without increasing drop at conducting current in the forward direction and withstand heavy. SOLUTION: An semiconductor substrate 1, pair of main surfaces two layers heavily-high doped concentration 3 lightly-doped 2 first conductivity-type are stacked, metal 5 formed on surface 1 forms barrier 51 with layer cathode electrode 6, second brought into contact heavily-doped terms ohmic resistance installed. A plurality buried 7 conductivity-type, p-n junction part close to intervals enlarged. COPYRIGHT: (C)2000,JPO