Low temperature and solution-processed Na-doped zinc oxide transparent thin film transistors with reliable electrical performance using methanol developing and surface engineering

摘要: A transparent thin film transistor (TTFT), including zinc oxide (ZnO), has come into the spotlight as an innovative TFT that potential to drive future of information technology industry. Herein, we developed a new direct patterning method, drop-casting with developing through combination aqueous ammonia–ZnO process doping Na ions and surface engineering for high n-type semiconducting performance good operational stability at low temperature. In particular, effective decomposition removal residual ammonia compounds using methanol have successful effect on both intrinsic doped ZnO precursor processes TFTs they showed extensive possibility based metal solutions. this TTFTs even temperature sintering. The mobility μ = 0.80 cm2 V−1 s−1 was obtained 200 °C sintering 0.10 100 addition, in ambient conditions, patterned TTFT exhibited electron 1.84 excellent device scant hysteresis 300 °C. This method is not only simple compared photolithography inkjet printing, but also sophisticated fidelity solution-processed TFTs. Moreover, proposed can be extended plastic substrates large scale because development continuous conditions. We believe adapted advanced toward printed electronic devices.