Kinetics of the solid-state reaction for the formation of amorphous ZrCo studied by electrical conductance measurements

作者: H. Schröder , K. Samwer

DOI: 10.1557/JMR.1988.0461

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摘要: Thin-film reactions of Co with Zr have been studied in the temperature range between 473 and 523 K by electrical conductance measurements cross-sectional transmission electron microscopy (CS-TEM). The reduction during solid state reaction is explained formation growth an amorphous phase at every ZrCo interface. For long times layer thickness follows a shifted (t)/sup 1/2 law. short show linear time law, which expected for interface limited

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