Interface Engineering in Superconducting Ultra-thin Film of Ga

摘要: Spin polarized tunneling studies were carried out with Al-Ga bilayer as a spin detector, by Meservey-Tedrow technique. The superconductor (SC)/Insulator (I)/Ferromagnet (FM) tunnel junctions provided ultra high vacuum molecular beam epitaxy (UHV-MBE) analysis of interfacial properties in the was also Auger electron spectroscopy. It observed that superconducting transition temperature and energy gap raised comparison bulk Ga pure ultrathin Al films. Current clearly show how one can modify material at interface just few monolayers.