Thin film growth of reactive sputter deposited tungsten–carbon thin films

摘要: Tungsten–carbon thin films have been reactively sputter deposited in various Ar–CH4 gas mixtures and the growth kinetics of reactive deposition process elucidated. The are amorphous as-deposited with partial crystallization W2C WC occurring following a 1100 °C–1 min rapid thermal anneal. Carbon incorporation within W–C is attributed to flux CH3 radicals impinging on surface. Although they significantly lower concentration (∼0.1%) than CH4 molecules contained plasma, their sticking coefficient larger that CH4. In addition, change rate carbon at higher (and subsequently CH3) concentrations has shown be due changes surface; as increases, surface becomes terminated decreases because low CH3–C coefficient.