作者: L. Skuja , M. Hirano , H. Hosono
DOI: 10.1103/PHYSREVLETT.84.302
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摘要: Interstitial O3 molecules in 7.9 eV photon-irradiated silica are identified. Their optical absorption band at 4.8 nearly coincides with the of nonbridging oxygen hole centers. The O3-related is distinguished by a smaller halfwidth (0.84 vs 1. 05 eV), susceptibility to ultraviolet bleaching, lack correlation 1.9 luminescence band, and rise singlet O2 0.974 during photobleaching. This identification solves long controversy on nature bands gives tool for studying mobility atomic SiO2.