A 0.18 μm CMOS low noise amplifier using a current reuse technique for 3.1-10.6 GHz UWB receivers
作者： Chunhua Wang , Qiuzhen Wan
DOI: 10.1088/1674-4926/32/8/085002
关键词:
摘要: A new, low complexity, ultra-wideband 3.1–10.6 GHz noise amplifier (LNA), designed in a chartered 0.18 μm RFCMOS technology, is presented. The LNA consists of only two simple amplifiers with an inter-stage inductor connected. first stage utilizing resistive current reuse and dual inductive degeneration technique used to attain wideband input matching figure. common source peaking as the second achieves high flat gain wide −3 dB bandwidth overall simultaneously. implemented presents maximum power 15.6 dB, reverse isolation −45 good input/output return losses are better than −10 frequency range 3.1−10.6 GHz. An excellent figure (NF) 2.8−4.7 was obtained required band dissipation 14.1 mW under supply voltage 1.5 V input-referred third-order intercept point (IIP3) −7.1 dBm at 6 chip area, including testing pads, 0.8 × 0.9 mm2.
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