Inverted metamorphic solar cell with bypass diode
作者： Paul R. Sharps
DOI:
关键词:
摘要: A method of forming a semiconductor structure including multijunction solar cell with an upper subcell, middle and lower by providing first substrate for the epitaxial growth material; subcell on said having band gap; second over gap smaller than grading interlayer third larger fourth such that is lattice mismatched respect to subcell. bypass diode further provided in region polarity connected diode.
google.co.uk 参考文章(15)
Mark A. Stan, Doug Collins, Paul R. Sharps, Daniel J. Aiken, An apparatus and method for integral bypass diode in solar cells ,(2002)
Milton Y. Yeh, Chaw-Long Chu, Frank Ho, Peter A. Iles, Solar cell having an integral monolithically grown bypass diode ,(1999)
B. Clevenger, D. Aiken, J. Hills, M.A. Stan, P.R. Sharps, N.S. Fatemi, The development of >28% efficient triple-junction space solar cells at Emcore Photovoltaics 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of. ,vol. 1, pp. 662- 665 ,(2003)
Mark W. Wanlass, High-efficiency, monolithic, multi-bandgap, tandem, photovoltaic energy converters ,(2004)
Gerhard Strobl, Solar cell with integrated protective diode ,(2005)
Milton Y. Yeh, Chaw-Long Chu, Frank Ho, Peter A. IIes, Semiconductor body forming a solar cell with a bypass diode ,(2003)
Arthur G. Milnes, Donald L. Feucht, Method for making thin film III-V compound semiconductors for solar cells involving the use of a molten intermediate layer ,(1976)
K. Craige Kellett, E. Glenn Kellett, Transmission wire clamp ,(1984)
David E. Joslin, Christopher M. Fetzer, Solar cell array with isotype-heterojunction diode ,(2006)
Mark A. Stan, Doug Collins, Paul R. Sharps, Daniel J. Aiken, Method of fabricating a multijunction solar cell with a bypass diode having an intrisis layer ,(2005)