Vertical-channel junction field-effect transistors having buried gates and methods of making

摘要: Semiconductor devices and methods of making the are described. The can be implemented in SiC include epitaxially grown n-type drift p-type trenched gate regions, an regrown channel region on top p-gate regions. A source or selectively implanted into region. Ohmic contacts to source, drain regions then formed. edge termination structures such as guard rings, junction extensions (JTE), other suitable p-n blocking structures. fabricated with different threshold voltages, for both depletion enhanced modes operation same doping. used discrete power transistors digital, analog, monolithic microwave integrated circuits.