Graphene field-effect transistors with ferroelectric gating.

摘要: Recent experiments on ferroelectric gating have introduced a novel functionality, ie, nonvolatility, in graphene field-effect transistors. A comprehensive understanding in the nonlinear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this Letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (n BG) provided by normal dielectric gating. More importantly, we prove that n BG can be used to control the ferroelectric gating …