High temperature interfacial reactions of SiC with metals

摘要: Interfacial reactions of SiC with selected high temperature metals have been studied at temperatures between 1000 and 1200 °C for various times. The include Nb, a strong carbide former, Ni, Co, stainless steel. Reactions the in this range were extensive; metal silicides, carbides, ternary metal–silicon–carbides, unreacted carbon formed as layered reaction products zones. In some systems, massive or localized interfacial melting was observed result metal–silicide formation. occurrence resulted formation nonplanar interfaces fracture beneath interface, while planar generated absence melting. steel clustered precipitates modulated randomly scattered characters. nature C precipitation behavior depends upon specific system is ...