作者: Michael M. Oye , Terry J. Mattord , Gary A. Hallock , Seth R. Bank , Mark A. Wistey
DOI: 10.1063/1.2806226
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摘要: This letter studies the effects of atomic N, metastable N2*, and ionic species on optical properties dilute nitride materials. Ga0.8In0.2N0.01As0.99 was grown using a 1% N2 in Ar gas mix from an Applied-Epi Unibulb™ rf plasma source. Isonitrogen samples with without ions were studied various operating conditions. Optical emission spectrometry used to characterize relative proportions different active nitrogen (atomic N N2*). Samples higher proportion resulted best overall material quality, although this improvement observed at high annealing temperatures. At lower temperatures, increased blueshifts for N; however, there no noticeable influence blueshift regardless whether or N2* dominant present plasma. The key implication work is that it helps elucid...