Wideband semiconductor optical amplifier steady-state numerical model

作者: M.J. Connelly

DOI: 10.1109/3.910455

关键词:

摘要: … ideal amplifier has no gain saturation (which implies a constant carrier density throughout the amplifier), material gain … 8 shows that the amplifier gain versus bias current characteristic is …

参考文章(15)
HP William, PF Brian, AT Saul, TV William, Numerical Recipes in Pascal ,(1989)
Yasuharu Suematsu, Alfred R Adams, Handbook of semiconductor lasers and photonic integrated circuits Published in <b>1994</b> in London by Chapman and Hall. ,(1994)
R. Olshansky, C. Su, J. Manning, W. Powazinik, Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources IEEE Journal of Quantum Electronics. ,vol. 20, pp. 838- 854 ,(1984) , 10.1109/JQE.1984.1072500
N. G. Nilsson, Empirical approximations for the Fermi energy in a semiconductor with parabolic bands Applied Physics Letters. ,vol. 33, pp. 653- 654 ,(1978) , 10.1063/1.90452
J.-C. Simon, P. DoussiÉre, L. Pophillat, B. Fernier, Gain and noise characteristics of a 1.5 μm near-travelling-wave semiconductor laser amplifier Electronics Letters. ,vol. 25, pp. 434- 436 ,(1989) , 10.1049/EL:19890298
M.-C. Amann, W. Thulke, Current confinement and leakage currents in planar buried-ridge-structure laser diodes on n-substrate IEEE Journal of Quantum Electronics. ,vol. 25, pp. 1595- 1602 ,(1989) , 10.1109/3.29300
L. Gillner, Comparative study of some travelling-wave semiconductor laser amplifier models IEE Proceedings J Optoelectronics. ,vol. 139, pp. 339- 347 ,(1992) , 10.1049/IP-J.1992.0058
Nasser Peyghambarian, Shun Lien Chuang, Stephan Koch, Physics of Optoelectronic Devices ,(1995)
S. Ruiz-Moreno, J. Guitart, Practical method for modelling the nonlinear behaviour of a travelling wave semiconductor optical amplifier IEE Proceedings J Optoelectronics. ,vol. 140, pp. 39- 43 ,(1993) , 10.1049/IP-J.1993.0007