GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
作者： P. K. Kandaswamy , F. Guillot , E. Bellet-Amalric , E. Monroy , L. Nevou
DOI: 10.1063/1.3003507
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摘要: We have studied the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well (MQW) structures for intersubband optoelectronics in the near …
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T. Zywietz, Jörg Neugebauer, M. Scheffler, J. Northrup, Chris G. Van de Walle, Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN Mrs Internet Journal of Nitride Semiconductor Research. ,vol. 3, pp. 26- ,(1998) , 10.1557/S1092578300000983
James H. Edgar, Inspec, Properties of group III nitrides INSPEC, the Institution of Electrical Engineers. ,(1994)
R. M. Feenstra, J. E. Northrup, Jörg Neugebauer, Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces Mrs Internet Journal of Nitride Semiconductor Research. ,vol. 7, pp. 1- 27 ,(2002) , 10.1557/S1092578300000296
T. L. Song, Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire Journal of Applied Physics. ,vol. 98, pp. 084906- ,(2005) , 10.1063/1.2108148
Claire Gmachl, Hock M. Ng, Alfred Y. Cho, Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells Applied Physics Letters. ,vol. 79, pp. 1590- 1592 ,(2001) , 10.1063/1.1403277
J. Hamazaki, S. Matsui, H. Kunugita, K. Ema, H. Kanazawa, T. Tachibana, A. Kikuchi, K. Kishino, Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells Applied Physics Letters. ,vol. 84, pp. 1102- 1104 ,(2004) , 10.1063/1.1647275
Norio Iizuka, Kei Kaneko, Nobuo Suzuki, Takashi Asano, Susumu Noda, Osamu Wada, Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells Applied Physics Letters. ,vol. 77, pp. 648- 650 ,(2000) , 10.1063/1.127073
V. D. Jovanović, D. Indjin, Z. Ikonić, P. Harrison, Simulation and design of GaN/AlGaN far-infrared (λ∼34 μm) quantum-cascade laser Applied Physics Letters. ,vol. 84, pp. 2995- 2997 ,(2004) , 10.1063/1.1707219
Tetsuya Nakamura, Shingo Mochizuki, Shinji Terao, Tomoaki Sano, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Structural analysis of Si-doped AlGaN/GaN multi-quantum wells Journal of Crystal Growth. pp. 1129- 1132 ,(2002) , 10.1016/S0022-0248(01)02069-3
A. Vardi, N. Akopian, G. Bahir, L. Doyennette, M. Tchernycheva, L. Nevou, F. H. Julien, F. Guillot, E. Monroy, Room temperature demonstration of GaN /AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength Applied Physics Letters. ,vol. 88, pp. 143101- ,(2006) , 10.1063/1.2186108