摘要: Thin films of In2O3 are prepared by the spraying method. The concentration charge carriers is changed from about 8×1019 cm−3 to 5×1020 suitable doping with Sn. optical effective mass found depend slightly on carrier concentration. Electrical and measurements indicate that electrons scattered predominantly charged impurity centres. Structural investigations show grain boundary scattering can be neglected. interpretation experimental results mainly based a paper von Baltz Escher, where analytical formulas for imaginary part complex dielectric constant given most important mechanisms in (degenerate) semiconductors.
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