Delocalization of the f Electron in CexLa1-xRu2Si2
作者： Yuji Matsumoto , Noriaki Kimura , Haruyoshi Aoki , Motoi Kimata , Taichi Terashima
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摘要: We have preformed the de Haas–van Alphen effect measurements in Ce x La 1- Ru 2 Si with magnetic fields (001) plane. All oscillations corresponding to those LaRu can be observed low concentration samples and evolution of Fermi surface properties is found depend strongly on sheet. show that attributed anisotropic hybridization f electron conduction electrons resultant delocalization electron.
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