作者: Carole C. Barron , James G. Fleming , Stephen Montague
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摘要: A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within substrate cavity and encapsulated sacrificial material. This allows the to annealed planarized prior forming using series of standard processing steps. After fabrication circuitry, protected by two-ply protection layer titanium nitride (TiN) tungsten (W) during an etch release process whereby released operation etching away portion material (e.g. silicon dioxide silicate glass) that encapsulates device. preferably performed mixture hydrofluoric acid (HF) hydrochloric (HCI) which reduces time releasing compared use buffered oxide etchant. device, TiN:W removed peroxide-based etchant without damaging circuitry.