Surface plasmon enhanced GeSn photodetectors operating at 2 µm.

摘要: Au-hole array and Au-GeSn grating structures were designed incorporated in GeSn metal-semiconductor-metal (MSM) photodetectors for enhanced photo detection at 2 µm. Both plasmonic are beneficial effective optical confinement near the surface due to plasmon resonance (SPR), contributing an responsivity. The responsivity enhancement Au hole-array structure is insensitive polarization direction, while depends on direction. photodetector with has ∼50% reinforcement compared reference photodetector. On other hand, benefits a 3× of 0.455 A/W 1.5V under TM-polarized illumination. achieved among highest values operating this work offer alternative solution high-efficiency detection, manifesting their great potentials as candidates µm communication emerging applications.