High-speed maskless laser patterning of indium tin oxide thin films
作者： O. Yavas , M. Takai
DOI: 10.1063/1.122532
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摘要: Patterning characteristics of indium tin oxide thin films using different wavelengths a diode-pumped Q-switched Nd:YLF and flashlamp-pumped Nd:YAG laser have been studied. While ripplelike structure in the etched line was formed due to incomplete material removal when first harmonic or used, residue-free could be obtained fourth even at higher scan speeds. The observed differences morphology attributed absorption infrared ultraviolet wavelengths. High process speeds excess 1 m/s achieved.
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