Spin Polarization and Magnetic Properties of VGaON and VGaONInGa in GaN: GGA+U Approach
作者： O. Volnianska
DOI: 10.1007/S10948-019-5004-9
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摘要: Electronic structure of a defect center containing the gallium vacancy and substitutional oxygen atom at nitrogen site (VGaON) in zinc blende wurtzite GaN was analyzed within GGA+U approach. The +U term applied to d(Ga), p(N), p(O), d(In). Neutral VGaON is stable high spin state with S = 1. strongly dependent on geometry charge state. Two structures, which arise due two different configurations VGaON, ON either along c-axis or one three equivalent tetrahedral positions were analyzed. weak ferromagnetic coupling between centers found. strength magnetic increased when there complex additional indium second neighbor (VGaONInGa). Magnetic VGaONInGa strong polarization p electrons nearest distant atoms.
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M. A. Reshchikov, H. Morkoç, S. S. Park, K. Y. Lee, Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study Applied Physics Letters. ,vol. 81, pp. 4970- 4972 ,(2002) , 10.1063/1.1531227
Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes Applied Physics Letters. ,vol. 64, pp. 1687- 1689 ,(1994) , 10.1063/1.111832
Charles Kittel, Introduction to solid state physics ,(1953)
Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu, Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes Applied Physics Letters. ,vol. 91, pp. 091110- ,(2007) , 10.1063/1.2775334
S Strite, J Ruan, Z Li, A Salvador, H Chen, David J Smith, WJ Choyke, H Morkoc, An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 9, pp. 1924- 1929 ,(1991) , 10.1116/1.585381
Takahiro Maruyama, Yutaka Miyajima, Kazutaka Hata, Sung Hwan Cho, Katsuhiro Akimoto, Hajime Okumura, Sadafumi Yoshida, Hiroo Kato, Electronic structure of wurzite- and zinc blende-GaN studied by angle-resolved photoemission Journal of Electronic Materials. ,vol. 27, pp. 200- 205 ,(1998) , 10.1007/S11664-998-0387-6
Akio Yamamoto, Md. R. Islam, Ting-Ting Kang, Akihiro Hashimoto, Recent advances in InN‐based solar cells: status and challenges in InGaN and InAlN solar cells Physica Status Solidi (c). ,vol. 7, pp. 1309- 1316 ,(2010) , 10.1002/PSSC.200983106
K. Jeganathan, V. Purushothaman, R. Debnath, S. Arumugam, Ferromagnetism in undoped One-dimensional GaN Nanowires AIP Advances. ,vol. 4, pp. 057116- ,(2014) , 10.1063/1.4878976
T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, C. Wetzel, Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire Applied Physics Letters. ,vol. 98, pp. 151102- ,(2011) , 10.1063/1.3579255
Jochen Heyd, Gustavo E. Scuseria, Matthias Ernzerhof, Hybrid functionals based on a screened Coulomb potential Journal of Chemical Physics. ,vol. 118, pp. 8207- 8215 ,(2003) , 10.1063/1.1564060