Application of convergent beam electron diffraction to study the stacking of layers in transition-metal dichalcogenides
作者： K.K. Fung , J.W. Steeds , J.A. Eades
DOI: 10.1016/0378-4363(80)90208-9
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摘要: Abstract The stacking of layers in transition-metal dichalcogenides the temperature range about 40 K to 600 has been studied by convergent beam electron microscopy. Results on order and crystal symmetry charge density wave (CDW) states pure doped 1T 4Hb polytypes are presented. We have succeeded imaging CDW domains these materials. also report formation CDWs 6R-TaSe 2 4Hb-Nb 0.87 V 0.13 Se .
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