作者: Chung K. Chang , Johnny C. Chen , Antonio Montalvo , Lee E. Cleveland , Michael A. Van Buskirk
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摘要: A positive power supply for generating and supplying a regulated potential to control gates of selected memory cells via word lines in an array flash EEPROM during programming includes clock circuit (18b) pair non-overlapping signals charge pump means (18c) responsive external (VCC) the high voltage. regulator (20) voltage reference is provided controlling so that it independent (VCC).