Current–voltage characteristics of nanostructured SnO2 films
作者： Alessio Giberti , Cesare Malagù , None
DOI: 10.1016/J.TSF.2013.04.091
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摘要: Abstract The conduction process in nanostructured SnO2 gas sensors under an external voltage has been studied, order to work out the main differences between fully depleted and not grains. With a model based on double Schottky barrier which occurs at interface two adjacent grains, it shown that shape of current–voltage curves is completely different cases. carriers available grains respond electric field, contributing total electrostatic potential, this being crucial difference from In work, we determined both cases provided calculation electrical current as function bias, including tunneling thermionic contributions. Theoretical simulations characteristics have compared with experimental data.
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