InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.

摘要: InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack are transformed into low refractive index nanoporous through doping-selective electrochemical wet etching process. The central wavelength of DBR was located at 442.3 nm a 57 nm linewidth and 97.1% peak reflectivity. effective cavity length (6.0λ), penetration depth (278 nm) structure, active layer matching to Fabry-Perot mode order 12 were observed far-field photoluminescence radiative spectra. High electroluminescence emission intensity line-width narrowing effect measured DBR-LED compared non-treated LED structure. Non-linear reducing effect, from 11.8 nm 0.73 nm, by increasing laser excited power. Resonant bottom nanoporous-DBR top GaN/air interface.