Compact modeling of SOI MOSFETs with ultra thin silicon and BOX layers for ultra low power applications
作者： Y. Fukunaga , M. Miura-Mattausch , U. Feldmann , H. Kikuchiharasa , M. Miyake
DOI: 10.1109/SISPAD.2013.6650630
关键词:
摘要: A compact model for SOI-MOSFET with ultra-thin both SOI and BOX layers has been developed base on the potential distribution within device. The is calculated by solving Poisson equation together additional analytical equations derived under approximations. All are solved simultaneously Newton iteration method. It demonstrated that can not only reproduce measured specific device characteristics but even predict change of caused parameter change.
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