作者: M J Uren , R A Davies , M Kaveh , M Pepper
DOI: 10.1088/0022-3719/14/13/003
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摘要: Discusses the effect of a magnetic field on weak localisation two-dimensional electron gas. It is shown that due to quantum corrections electron-electron relaxation time tau ee varies with temperature T and ee-1=A1T+A2T2, in range 3K-0.1K. This short causes rapid transition between states which are weakly localised so reduces logarithmic correction conductance. Negative magnetoresistance measurements reported for (100) silicon MOSFETs 0.1-4K.