Cavity solitons in passive bulk semiconductor microcavities. II. Dynamical properties and control

作者: G. Tissoni , L. Spinelli , M. Brambilla , T. Maggipinto , I. M. Perrini

DOI: 10.1364/JOSAB.16.002095

关键词:

摘要: We analyze numerically the microscopic model formulated in a companion paper [J. Opt. Soc. Am. B16, 2083 (1999)] to describe an externally driven broad-area bulk GaAs microcavity. predict formation of patterns transverse profile output field. In particular, we find existence stable cavity solitons, which appear as self-organized light peaks embedded homogeneous background. study characteristics such structures and specifically possibility switching them on off at desired locations field profile. Moreover, interaction properties solitons with purpose applying them, future, optical information treatment. Finally, dynamical quantitatively evaluating motion across plane induced by spatial gradients input

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