作者: Pawan Singh , S. Prakash , J. Singh
DOI: 10.1103/PHYSREVB.49.12259
关键词:
摘要: Electric-field gradients (EFG's), due to substitutional transition-metal impurities in vanadium have been evaluated using a discrete-lattice static method. The valence and size EFG's are generated simultaneously with the help of perfect imperfect crystal potentials. at first- second-nearest neighbors (1NN, 2NN) impurity calculated for dilute alloys VNb, VMo, VTa, VW. d-band effects both host included through potential. results agreement experimental values. EFG is larger than 1NN while starts dominating 2NN sites.