Density of states in the gap of amorphous semiconductors determined from modulated photocurrent measurements in the recombination regime
作者： R. R. Koropecki , J. A. Schmidt , R. Arce
DOI: 10.1063/1.1469695
关键词:
摘要: An experimental technique to study the energy profile of localized states in gap amorphous semiconductors is proposed. The method based on relationship between recombination lifetime and density (DOS) at quasi-Fermi level for trapped carriers. We use modulated photocurrent experiment recombination-limited regime as a convenient measure lifetime. Measurements performed function temperature allow DOS above Fermi be determined. accuracy limitations are studied by means computer simulations. applied obtain defect hydrogenated silicon sample.
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