作者: Richard E. Ewing , Deane K. Smith
DOI: 10.1063/1.1656095
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摘要: Inhomogeneities in vapor‐grown epitaxial layers of Ga(As, P) alloys on GaAs substrates were studied by the electron microprobe, divergent‐beam x‐ray method, and topography. The prepared growing a graded composition region between substrate final GaAs1−xPx composition. microprobe was used to determine As/P ratio layer scanning cleaved edge substrate. results showed two types samples: those with steps without these steps. Pseudo‐Kossel patterns for as well alloy surface are seen divergent pattern photographs. sharpness pseudo‐Kossel lines indicates that degree crystalline perfection decreased increasing phosphorus content layer. Lang topographs show accommodation lattice mismatch an...