Investigation of the Growth and Chemical Stability of Composite Metal Gates on Ultra-thin Gate Dielectrics
作者： B. Claflin , M. Binger , G. Lucovsky , H.-Y. Yang
DOI: 10.1557/PROC-532-171
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摘要: The growth of reactively sputtered TiN x and WN compound metal films on ultra-thin, remote plasma enhanced chemical vapor deposited SiO 2 /Si 3 N 4 (ON) stack dielectrics is investigated from initial interface formation to bulk film by interrupted on-line Auger electron spectroscopy (AES). Growth both metals occurs uniformly without a seed layer dielectrics. stability these metal/dielectric interfaces studied sequential rapid thermal annealing treatments up 850 °C AES. reacts with above but the addition Si dielectric top-layer makes /ON chemically stable at °C. /SiO are below 650 MOS capacitors using or gates gate exhibit excellent capacitance-voltage characteristics. work function for lies near midgap in while it closer valence band.
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