Near bulk semiconductor to metal transition in epitaxial VO2 thin films
作者： Alok Gupta , Jagdish Narayan , Titas Dutta
DOI: 10.1063/1.3503632
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摘要: We have been able to achieve semiconductor-to-metal transition (SMT) temperature in VO2 thin films close the values reported for bulk single crystals. This was achieved by complete relaxation of misfit strain, which leads a negligible tension/compression along [001], upon introduction NiO buffer layer on c-plane sapphire substrate. In this paper, we discuss mechanism behind strain occurs under paradigm domain-matching epitaxy, where integral multiples planes match across interface. layers were grown situ, prior deposition, using pulsed-laser deposition technique. X-ray θ-2θ, φ, and pole figure scans performed structural characterization VO2/NiO/Al2O3 (0001) heterostructure. All constituent heterostructure found be epitaxial with orientation relationship: (020)VO2∥(111)NiO∥(0001)Al2O3 ⟨100⟩VO2∥⟨110⟩NiO∥⟨101¯0⟩Al2O3. Parameters related SMT, such as hysteresis t...
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