Magnon scattering and tunneling through localized states in magnetic tunnel junctions
作者： J. Wingbermühle , S. Stein , H. Kohlstedt
DOI: 10.1063/1.1516844
关键词:
摘要: Spin-dependent tunnel junctions with Co75Fe25 electrodes and a Fe50Mn50 pinning layer were fabricated tunneling magnetoresistance of about 20% at room temperature. The Al2O3 barriers formed by ultra-violet light assisted oxidation. resistance × area (R×A) product was 375 kΩ μm2 in the parallel alignment magnetizations. effect barrier impurities has been investigated via conductance as function temperature bias voltage for as-deposited annealed samples. spin wave parameter α determined to be 3.06×10−5 2.03×10−5 K−3/2 before after annealing, respectively. improved properties annealing are explained inelastic hopping several localized states reduced magnon scattering. We propose qualitative model homogenization during which supports former Rutherford backscattering x-ray photoelectron spectroscopy studies.
core.ac.uk
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(36)
Xiu-Feng Han, Mikihiko Oogane, Hitoshi Kubota, Yasuo Ando, Terunobu Miyazaki, Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes Applied Physics Letters. ,vol. 77, pp. 283- 285 ,(2000) , 10.1063/1.126951
J. S. Moodera, Lisa R. Kinder, Terrilyn M. Wong, R. Meservey, Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. Physical Review Letters. ,vol. 74, pp. 3273- 3276 ,(1995) , 10.1103/PHYSREVLETT.74.3273
T. Hagler, R. Kinder, G. Bayreuther, Temperature dependence of tunnel magnetoresistance Journal of Applied Physics. ,vol. 89, pp. 7570- 7572 ,(2001) , 10.1063/1.1359229
W. F. Brinkman, R. C. Dynes, J. M. Rowell, Tunneling Conductance of Asymmetrical Barriers Journal of Applied Physics. ,vol. 41, pp. 1915- 1921 ,(1970) , 10.1063/1.1659141
M. Naito, M. R. Beasley, Microscopic study of tunneling processes via localized states in amorphous-Si/ SiO x tunnel barriers Physical Review B. ,vol. 35, pp. 2548- 2551 ,(1987) , 10.1103/PHYSREVB.35.2548
S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, R. E. Scheuerlein, E. J. O’Sullivan, S. L. Brown, J. Bucchigano, D. W. Abraham, Yu Lu, M. Rooks, P. L. Trouilloud, R. A. Wanner, W. J. Gallagher, Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) Journal of Applied Physics. ,vol. 85, pp. 5828- 5833 ,(1999) , 10.1063/1.369932
M. Julliere, Tunneling between ferromagnetic films Physics Letters A. ,vol. 54, pp. 225- 226 ,(1975) , 10.1016/0375-9601(75)90174-7
J. Frenkel, On the Electrical Resistance of Contacts between Solid Conductors Physical Review. ,vol. 36, pp. 1604- 1618 ,(1930) , 10.1103/PHYSREV.36.1604
L. Pesenson, R. Robertazzi, R. Buhrman, S. Cypher, B. Hunt, Interacting and self-organized two-level states in tunnel barriers Physical Review Letters. ,vol. 67, pp. 2866- 2869 ,(1991) , 10.1103/PHYSREVLETT.67.2866
J. Zhang, R. M. White, Voltage dependence of magnetoresistance in spin dependent tunneling junctions Journal of Applied Physics. ,vol. 83, pp. 6512- 6514 ,(1998) , 10.1063/1.367644