作者: Choongyu Hwang , Jinwoong Hwang , Ji-Eun Lee , Jonathan Denlinger , Sung-Kwan Mo
DOI: 10.1063/1.4986425
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摘要: We have investigated the electron band structure of graphene epitaxially grown on an SiC substrate using angle-resolved photoemission spectroscopy. The conical energy spectrum exhibits a minimum slope at ∼50 K, which is accompanied by separation between its two branches. These observations provide viable route towards engineering electronic properties temperature, while latter suggests possible evidence gap via strain induced and modulated temperature.