Design of high performance MoS 2 -based non-volatile memory via ion beam defect engineering
作者： Rui Chen , Qinru Liu , Jing Liu , Xiaolong Zhao , Jiangchao Liu
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摘要: … After N ions implantation, a variety of nitrogen bonding states can be observed, such as N–Si 3 , N–SiO 2 and N–Si 2 O, and most of them are the N–Si 3 configurations formed by one N …
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