Rare-earth (Dy)-doped (GeS 2 ) 80 (In 2 S 3 ) 20 thin film: influence of annealing temperature in argon environment on the linear and nonlinear optical parameters
作者： Pankaj Sharma , Vineet Sharma , Ekta Sharma , A Dahshan , KA Aly
DOI: 10.1007/S00339-020-04170-5
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摘要: We report the optical properties of thermally evaporated rare-earth (Dy) doped (GeS2)80(In2S3)20 thin film. Film thickness 1100 nm has been deposited on a microscopic glass slide, and as-prepared film characterized using X-ray diffraction, energy dispersive spectroscopy UV–visible–near infrared spectroscopy. With annealing temperature, refractive index is noticed to decrease from 2.51 2.27, while bandgap observed increase 2.03 2.29. The dispersion n for as prepared annealed films have discussed single oscillator model proposed by Wemple–Di Domenico relationship. value Eo (5.31–4.40 eV) Ed (28.22–18.18 eV) are decreasing films. explained in terms disorder system.
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