Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study
作者： Y. H. Kim , J. Y. Lee , Y. G. Noh , M. D. Kim , S. M. Cho
DOI: 10.1063/1.2209714
关键词:
摘要: … properties of GaSb layers grown on silicon substrate by molecular beam epitaxy method are investigated by transmission electron microscopy. It is found that the GaSb grows to three-…
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