InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials

作者: G. C. Osbourn

DOI: 10.1103/PHYSREVB.27.5126

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摘要: Strained-layer superlattices grown from lattice-mismatched layers of InGaAs are proposed as useful electronic materials with tailorable properties. The first study the properties these structures has been carried out. Band-gap energies calculated a function layer thicknesses and compositions. results demonstrate for time that lattice constant, band gap, transport ternary strained-layer can be independently varied. This new capability could permit to significantly broaden range applications associated compound.

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