Nonvolatile memory elements based on organic materials

作者: J. C. Scott , L. D. Bozano

DOI: 10.1002/ADMA.200602564

关键词:

摘要: Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the …

参考文章(103)
Th. B. Singh, N. Marjanović, G. J. Matt, N. S. Sariciftci, R. Schwödiauer, S. Bauer, Nonvolatile organic field-effect transistor memory element with a polymeric gate electret Applied Physics Letters. ,vol. 85, pp. 5409- 5411 ,(2004) , 10.1063/1.1828236
HJ Gao, ZQ Xue, QD Wu, SJ Pang, Structure and electrical properties of Ag-ultrafine-particle–polymer thin films Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 13, pp. 1242- 1246 ,(1995) , 10.1116/1.588244
M. Lauters, B. McCarthy, D. Sarid, G. E. Jabbour, Nonvolatile multilevel conductance and memory effects in organic thin films Applied Physics Letters. ,vol. 87, pp. 231105- ,(2005) , 10.1063/1.2138809
Anirban Bandyopadhyay, Amlan J Pal, Key to design functional organic molecules for binary operation with large conductance switching Chemical Physics Letters. ,vol. 371, pp. 86- 90 ,(2003) , 10.1016/S0009-2614(03)00248-3
Anirban Bandyopadhyay, Amlan J. Pal, Multilevel conductivity and conductance switching in supramolecular structures of an organic molecule Applied Physics Letters. ,vol. 84, pp. 999- 1001 ,(2004) , 10.1063/1.1644611
Ajit Kumar Mahapatro, Ruchi Agrawal, Subhasis Ghosh, None, Electric-field-induced conductance transition in 8-hydroxyquinoline aluminum (Alq3) Journal of Applied Physics. ,vol. 96, pp. 3583- 3585 ,(2004) , 10.1063/1.1778211
E.I. Kamitsos, C.H. Tzinis, W.M. Risen, Raman study of the mechanism of electrical switching in Cu TCNQ films Solid State Communications. ,vol. 42, pp. 561- 565 ,(1982) , 10.1016/0038-1098(82)90608-1
A.R. Elsharkawi, K.C. Kao, Switching and memory phenomena in anthracene thin films Journal of Physics and Chemistry of Solids. ,vol. 38, pp. 95- 96 ,(1977) , 10.1016/0022-3697(77)90152-4
Q. Li, G. Mathur, S. Gowda, S. Surthi, Q. Zhao, L. Yu, J. S. Lindsey, D. F. Bocian, V. Misra, Multibit Memory Using Self‐Assembly of Mixed Ferrocene/Porphyrin Monolayers on Silicon Advanced Materials. ,vol. 16, pp. 133- 137 ,(2004) , 10.1002/ADMA.200305680
Liping Ma, Seungmoon Pyo, Jianyong Ouyang, Qianfei Xu, Yang Yang, Nonvolatile electrical bistability of organic/metal-nanocluster/organic system Applied Physics Letters. ,vol. 82, pp. 1419- 1421 ,(2003) , 10.1063/1.1556555