Vertical memory strings, and vertically-stacked structures

摘要: Some embodiments include methods of forming vertical memory strings. A trench is formed to extend through a stack alternating electrically conductive levels and insulative levels. An panel within the trench. sections are removed form openings. Each opening has first pair opposing sides along stack, second remaining panel. Cavities into Charge blocking material charge-storage cavities. Channel openings spaced from by gate dielectric material. semiconductor constructions, some vertically-stacked structures.