作者: Wei-yu Wu , A. Jánossy , G. Grüner
DOI: 10.1016/0038-1098(84)90412-5
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摘要: Abstract Experimental data on the low frequency dielectric constant ϵ and threshold field ET for onset of sliding charge density wave conduction are presented pure niobium doped orthorhombic TaS3. It was found that ϵET is independent impurity concentration temperature in range between 100 K to 190 K. We point out classical single particle model Gruner, Zawadowski, Chaikin; deformable medium Fukuyama Lee semiconductor Bardeen all predict be concentration. The numerical estimates within an order magnitude agreement with present experiments.