Electronic structure and properties of CoSi2.

作者: L. F. Mattheiss , D. R. Hamann

DOI: 10.1103/PHYSREVB.37.10623

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参考文章(28)
S. P. Murarka, Refractory silicides for integrated circuits Journal of Vacuum Science and Technology. ,vol. 17, pp. 775- 792 ,(1980) , 10.1116/1.570560
R. T. Tung, Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces Physical Review Letters. ,vol. 52, pp. 461- 464 ,(1984) , 10.1103/PHYSREVLETT.52.461
R. T. Tung, Schottky barrier heights of single crystal silicides on Si(111) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 2, pp. 465- 470 ,(1984) , 10.1116/1.582896
R. J. Hauenstein, T. E. Schlesinger, T. C. McGill, B. D. Hunt, L. J. Schowalter, Schottky barrier height measurements of epitaxial NiSi2 on Si Applied Physics Letters. ,vol. 47, pp. 853- 855 ,(1985) , 10.1063/1.96007
E. Rosencher, S. Delage, Y. Campidelli, F. Arnaud D'Avitaya, Transistor effect in monolithic Si/CoSi2/Si epitaxial structures Electronics Letters. ,vol. 20, pp. 762- 764 ,(1984) , 10.1049/EL:19840519
J. C. Hensel, A. F. J. Levi, R. T. Tung, J. M. Gibson, Transistor action in Si/CoSi2/Si heterostructures Applied Physics Letters. ,vol. 47, pp. 151- 153 ,(1985) , 10.1063/1.96245
E. Rosencher, S. Delage, F.Arnaud D'Avitaya, C. D'Anterroches, K. Belhaddad, J.C. Pfister, Realization and electrical properties of a monolithic metal-base transistor : The Si/CoSi2/Si structure Physica B+C. ,vol. 134, pp. 106- 110 ,(1985) , 10.1016/0378-4363(85)90328-6
R. T. Tung, A. F. J. Levi, J. M. Gibson, Control of a natural permeable CoSi2 base transistor Applied Physics Letters. ,vol. 48, pp. 635- 637 ,(1986) , 10.1063/1.96728
E. Rosencher, P. A. Badoz, J. C. Pfister, F. Arnaud d’Avitaya, G. Vincent, S. Delage, Study of ballistic transport in Si‐CoSi2‐Si metal base transistors Applied Physics Letters. ,vol. 49, pp. 271- 273 ,(1986) , 10.1063/1.97138