Monitoring of paralleled IGBT/diode modules

作者: P. Hofer-Noser , N. Karrer

DOI: 10.1109/63.761687

关键词:

摘要: A method is presented to monitor the state of a converter with an unlimited number paralleled insulated gate bipolar transistor (IGBT)/diode modules individual drives. The monitoring functions can be implemented without extra signal processing or load-side components. based on active gate-controlled current balancing (CB) principle. This principle reviewed in first part this paper, and necessary supplements implement are shown. In second part, experimental measurements new control allows losses sharing between power devices, need match devices nor Thus, overall reliability increased increasing costs. Since no matching needed, handling logistic costs significantly reduced. IGBT/diode for standard paralleling selected, only same class excessive derating. switching off one branches case parameter degradation keep operating at lower power.

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