Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes
作者： Agata Bojarska , Jakub Goss , Szymon Stanczyk , Irina Makarowa , Dario Schiavon
DOI: 10.1016/J.SPMI.2018.02.016
关键词:
摘要: Abstract In this work, we investigate the role of electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets devices with very different EBL aluminum composition (3% and 12%) design (graded superlattice). The results electro-optical characterization these reveal surprisingly modest determination threshold current differential efficiency values. However, structure influences operating voltage, which is decreased for lower superlattice EBL. observe also differences thermal stability – characteristic temperature lasers 3% Al
harvard.edu
sci-hub.se 参考文章(18)
Jia-Xing Wang, Lai Wang, Zhi-Biao Hao, Yi Luo, Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED Chinese Physics Letters. ,vol. 28, pp. 118105- 118105 ,(2011) , 10.1088/0256-307X/28/11/118105
Agata Bojarska, Jakub Goss, Łucja Marona, Anna Kafar, Szymon Stańczyk, Irina Makarowa, Stephen Najda, Grzegorz Targowski, Tadek Suski, Piotr Perlin, Emission wavelength dependence of characteristic temperature of InGaN laser diodes Applied Physics Letters. ,vol. 103, pp. 071102- ,(2013) , 10.1063/1.4818576
Joachim Piprek, Z. M. Simon Li, Sensitivity analysis of electron leakage in III-nitride light-emitting diodes Applied Physics Letters. ,vol. 102, pp. 131103- ,(2013) , 10.1063/1.4799672
S. Stańczyk, T. Czyszanowski, A. Kafar, J. Goss, S. Grzanka, E. Grzanka, R. Czernecki, A. Bojarska, G. Targowski, M. Leszczyński, T. Suski, R. Kucharski, P. Perlin, Graded-index separate confinement heterostructure InGaN laser diodes Applied Physics Letters. ,vol. 103, pp. 261107- ,(2013) , 10.1063/1.4857695
J Lee, X Li, X Ni, Ü Özgür, Hadis Morkoç, T Paskova, G Mulholland, KR Evans, None, On carrier spillover in c- and m-plane InGaN light emitting diodes Applied Physics Letters. ,vol. 95, pp. 201113- ,(2009) , 10.1063/1.3266833
Qi Dai, Qifeng Shan, Jing Wang, Sameer Chhajed, Jaehee Cho, E. Fred Schubert, Mary H. Crawford, Daniel D. Koleske, Min-Ho Kim, Yongjo Park, Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes Applied Physics Letters. ,vol. 97, pp. 133507- ,(2010) , 10.1063/1.3493654
R. Dwiliński, R. Doradziński, J. Garczyński, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, Excellent crystallinity of truly bulk ammonothermal GaN Journal of Crystal Growth. ,vol. 310, pp. 3911- 3916 ,(2008) , 10.1016/J.JCRYSGRO.2008.06.036
Wei Yang, Ding Li, Juan He, Xiaodong Hu, Advantage of tapered and graded AlGaN electron blocking layer in InGaN‐based blue laser diodes Physica Status Solidi (c). ,vol. 10, pp. 346- 349 ,(2013) , 10.1002/PSSC.201200637
Z. M. Simon Li, On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes Applied Physics Letters. ,vol. 103, pp. 233505- ,(2013) , 10.1063/1.4839417
Agata Bojarska, Łucja Marona, Irina Makarowa, Robert Czernecki, Mike Leszczynski, Tadeusz Suski, Piotr Perlin, Negative-T0 InGaN laser diodes and their degradation Applied Physics Letters. ,vol. 106, pp. 171107- ,(2015) , 10.1063/1.4918994